КП936Б
КП936, КП936А, КП936Б, КП936В, КП936Г, КП936Д, КП936Е
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Description
Parameters
| Parameter | КП936А | КП936Б | КП936В | КП936Г | КП936Д | КП936Е | |
|---|---|---|---|---|---|---|---|
Noise factor | NF | ||||||
Slope of a field effect transistor | S1-S2/I | 1000 ~ 2500 | 1000 ~ 2500 | 1000 ~ 2500 | 1000 ~ 2500 | >1000 | >1000 |
Gate leakage current with connected drain and source | IG | ||||||
Input capacitance of field effect transistor | Ciss | 2.3 nF | |||||
Continuous voltage between gate and source | UGS | <30 V | <30 V | <30 V | <30 V | (not set) | <30 V |
Continuous voltage between drain and source | UDSS | <350 V | <400 V | <350 V | <400 V | <300 V | <400 V |
Continuous drain current | IDSS | <10 A | <7 A | <10 A | <7 A | <10 A | <7 A |
Power dissipation with heatsink | PHS | <75 W | |||||
FET channel type | Channel | N-ch | |||||