КП934А-1

КП934, КП934А, КП934Б, КП934В, КП934А-1, КП934Б-1, КП934В-1

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Description

Parameters

Parameter		КП934А	КП934Б	КП934В	КП934А-1	КП934Б-1	КП934В-1
Noise factor	N_F
Power dissipation	P	<2 W
Gate leakage current with connected drain and source	I_G
Input capacitance of field effect transistor	C_iss	210 pF
Continuous voltage between gate and source	U_GS	<5 V
Continuous voltage between drain and source	U_DSS	<450 V	<400 V	<300 V	<450 V	<400 V	<300 V
Continuous drain current	I_DSS	<10 A
Power dissipation with heatsink	P_HS	<40 W
Technology of field-effect transistor	Technology	SIT
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<100 mΩ
Pulse drain current	I_DSS-I	<15 A