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КП934

КП934, КП934А, КП934Б, КП934В, КП934А-1, КП934Б-1, КП934В-1

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Description

Parameters

ParameterКП934АКП934БКП934ВКП934А-1КП934Б-1КП934В-1
Noise factor
NF
Power dissipation
P
<2 W
Gate leakage current with connected drain and source
IG
Input capacitance of field effect transistor
Ciss
210 pF
Continuous voltage between gate and source
UGS
<5 V
Continuous voltage between drain and source
UDSS
<450 V<400 V<300 V<450 V<400 V<300 V
Continuous drain current
IDSS
<10 A
Power dissipation with heatsink
PHS
<40 W
Technology of field-effect transistor
Technology
SIT
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<100 mΩ
Pulse drain current
IDSS-I
<15 A