КП933
КП933, КП933А, КП933Б
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Description
Parameters
| Parameter | КП933А | КП933Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <160 W | |
Slope of a field effect transistor | S1-S2/I | >650при Iс = 2 А | >550при Iс = 2 А |
Initial drain current of the field effect transistor | I01-I02 | <5 mAпри U = 20 В | |
Gate leakage current with connected drain and source | IG | 250 nAпри Uсз = 20В | |
Input capacitance of field effect transistor | Ciss | 210 pF | |
Continuous voltage between gate and drain | UGD | <55 V | |
Continuous voltage between gate and source | UGS | <20 V | |
Continuous voltage between drain and source | UDSS | <45 V | |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Pulse drain current | IDSS-I | <15 A | <9 A |