КП932
КП932, КП932А
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Description
Parameters
| Parameter | КП932А | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <10 W |
Slope of a field effect transistor | S1-S2/I | >55при Iс = 0.15 А |
Gate leakage current with connected drain and source | IG | 10 nAпри Uсз = 10В |
Input capacitance of field effect transistor | Ciss | 20 pF |
Feedthrough capacitance | C12 | 3 pF |
Continuous voltage between gate and drain | UGD | <265 V |
Continuous voltage between gate and source | UGS | <15 V |
Continuous voltage between drain and source | UDSS | <250 V |
Channel resistance at ON state | RDS-ON | <40 Ω |