Доход от майнинга

КП931А

КП931, КП931А, КП931Б, КП931В

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterКП931АКП931БКП931В
Noise factor
NF
Power dissipation
P
<1 W
Gate leakage current with connected drain and source
IG
3 mAпри Uсз = 5В
Continuous voltage between gate and drain
UGD
<800 V<600 V<450 V
Continuous voltage between gate and source
UGS
<5 V
Continuous voltage between drain and source
UDSS
<800 V<600 V<450 V
Continuous drain current
IDSS
<5 A
Power dissipation with heatsink
PHS
<20 W
Technology of field-effect transistor
Technology
SIT
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<150 mΩ
Pulse drain current
IDSS-I
<7 A