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КП931

КП931, КП931А, КП931Б, КП931В

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Description

Parameters

ParameterКП931АКП931БКП931В
Noise factor
NF
Power dissipation
P
<1 W
Gate leakage current with connected drain and source
IG
3 mAпри Uсз = 5В
Continuous voltage between gate and drain
UGD
<800 V<600 V<450 V
Continuous voltage between gate and source
UGS
<5 V
Continuous voltage between drain and source
UDSS
<800 V<600 V<450 V
Continuous drain current
IDSS
<5 A
Power dissipation with heatsink
PHS
<20 W
Technology of field-effect transistor
Technology
SIT
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<150 mΩ
Pulse drain current
IDSS-I
<7 A