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3П930Б

3П930, 3П930А, 3П930Б, 3П930В

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Description

Parameters

Parameter3П930А3П930Б3П930В
Noise factor
NF
Slope of a field effect transistor
S1-S2/I
>1000при Iс = 4 А
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<5 V
Continuous voltage between drain and source
UDSS
<8 V
Power dissipation with heatsink
PHS
<21 W
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch