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Parameter | 2П928А | 2П928Б | |
---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <250 W | |
Slope of a field effect transistor | S1-S2/I | 1000 ~ 2300при Iс = 3 А | |
Gate leakage current with connected drain and source | IG | ||
Input capacitance of field effect transistor | Ciss | 570 pF | |
Feedthrough capacitance | C12 | 60 pF | |
Continuous voltage between gate and drain | UGD | <60 V | <65 V |
Continuous voltage between gate and source | UGS | <25 V | |
Continuous voltage between drain and source | UDSS | <50 V | <55 V |
Continuous drain current | IDSS | <16 A | |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch |