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2П928

2П928, 2П928А, 2П928Б

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Description

Parameters

Parameter2П928А2П928Б
Noise factor
NF
Power dissipation
P
<250 W
Slope of a field effect transistor
S1-S2/I
1000 ~ 2300при Iс = 3 А
Gate leakage current with connected drain and source
IG
Input capacitance of field effect transistor
Ciss
570 pF
Feedthrough capacitance
C12
60 pF
Continuous voltage between gate and drain
UGD
<60 V<65 V
Continuous voltage between gate and source
UGS
<25 V
Continuous voltage between drain and source
UDSS
<50 V<55 V
Continuous drain current
IDSS
<16 A
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch