Доход от майнинга

3П927

3П927, 3П927А-2, 3П927Б-2, 3П927В-2, 3П927Г-2, 3П927Д-2

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Description

Parameters

Parameter3П927А-23П927Б-23П927В-23П927Г-23П927Д-2
Noise factor
NF
Slope of a field effect transistor
S1-S2/I
50 ~ 150при Iс = 0.4 А 50 ~ 200при Iс = 0.4 А 50 ~ 200при Iс = 0.4 А 50 ~ 200при Iс = 0.4 А 50 ~ 200при Iс = 0.4 А
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<3 V
Continuous voltage between drain and source
UDSS
<7 V
Power dissipation with heatsink
PHS
<2.5 W
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch