2П926А
2П926, 2П926А, 2П926Б, 2П926В
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Description
Parameters
| Parameter | 2П926А | 2П926Б | 2П926В | |
|---|---|---|---|---|
Noise factor | NF | |||
Power dissipation | P | <50 W | ||
Slope of a field effect transistor | S1-S2/I | >2000при Iс = 4 А | ||
Gate leakage current with connected drain and source | IG | |||
Continuous voltage between gate and drain | UGD | <475 V | <420 V | <320 V |
Continuous voltage between gate and source | UGS | <25 V | <20 V | <20 V |
Continuous voltage between drain and source | UDSS | <450 V | <400 V | <300 V |
Continuous drain current | IDSS | <16 A | <16 A | <8 A |
Technology of field-effect transistor | Technology | JFET | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <100 mΩ | <100 mΩ | (not set) |
Pulse drain current | IDSS-I | <30 A | <30 A | (not set) |