3П925
3П925, 3П925А-2, 3П925Б-2
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Description
Parameters
| Parameter | 3П925А-2 | 3П925Б-2 | |
|---|---|---|---|
Noise factor | NF | ||
Slope of a field effect transistor | S1-S2/I | 300 ~ 700при Iс = 1.8 А | |
Initial drain current of the field effect transistor | I01-I02 | <3 A | |
Gate leakage current with connected drain and source | IG | ||
Continuous voltage between gate and source | UGS | <5 V | |
Continuous voltage between drain and source | UDSS | <8 V | |
Power dissipation with heatsink | PHS | <7 W | |
Technology of field-effect transistor | Technology | Schottky | |
FET channel type | Channel | N-ch | |