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КП923А

КП923, КП923А, КП923Б, КП923В, КП923Г

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Description

Parameters

Parameter		КП923А	КП923Б	КП923В	КП923Г
Noise factor	N_F
Power dissipation	P	<100 W	<100 W	<50 W	<50 W
Slope of a field effect transistor	S1-S2/I	1000 ~ 1500при Iс = 3 А	700 ~ 1000при Iс = 3 А	550 ~ 700при Iс = 2 А	350 ~ 600при Iс = 2 А
Initial drain current of the field effect transistor	I₀₁-I₀₂	<50 mAпри U = 20 В	(not set)	<25 mAпри U = 20 В	(not set)
Gate leakage current with connected drain and source	I_G	100 nAпри Uсз = 20В
Input capacitance of field effect transistor	C_iss	400 pF	400 pF	250 pF	250 pF
Continuous voltage between gate and drain	U_GD	<60 V
Continuous voltage between gate and source	U_GS	<20 V
Continuous voltage between drain and source	U_DSS	<50 V
Continuous drain current	I_DSS	<12 A	<8 A	<6 A	<4 A
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	(not set)	<1 Ω	(not set)	<3 Ω