2П922А
2П922, 2П922А, 2П922Б, 2П922В, 2П922А-1, 2П922Б-1, 2П922В-1, 2П922Г-1
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Description
Parameters
| Parameter | 2П922А | 2П922Б | 2П922В | 2П922А-1 | 2П922Б-1 | 2П922В-1 | 2П922Г-1 | |
|---|---|---|---|---|---|---|---|---|
Noise factor | NF | |||||||
Power dissipation | P | <60 W | ||||||
Slope of a field effect transistor | S1-S2/I | 1000 ~ 2100при Iс = 1 А | ||||||
Gate leakage current with connected drain and source | IG | 5 nA | 5 nA | 1 nAпри Uсз = 30В | 5 nA | 5 nAпри Uсз = 30В | ||
Input capacitance of field effect transistor | Ciss | 2 nF | ||||||
Feedthrough capacitance | C12 | 1.2 nF | 1.2 nF | (not set) | (not set) | (not set) | (not set) | (not set) |
Continuous voltage between gate and drain | UGD | <100 V | ||||||
Continuous voltage between gate and source | UGS | <30 V | ||||||
Continuous voltage between drain and source | UDSS | <100 V | ||||||
Continuous drain current | IDSS | <10 A | <10 A | <5 A | <10 A | <10 A | <5 A | <10 A |
Technology of field-effect transistor | Technology | MOSFET | ||||||
FET channel type | Channel | N-ch | ||||||
Channel resistance at ON state | RDS-ON | <200 mΩ | <400 mΩ | <1 Ω | <200 mΩ | <400 mΩ | <1 Ω | <120 mΩ |
Pulse drain current | IDSS-I | <20 A | ||||||