КП921А
КП921, КП921А
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Description
Parameters
| Parameter | КП921А | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <15 W |
Slope of a field effect transistor | S1-S2/I | 1000 ~ 1500при Iс = 1 А |
Initial drain current of the field effect transistor | I01-I02 | <100 µAпри U = 40 В |
Gate leakage current with connected drain and source | IG | 50 nAпри Uсз = 15В |
Input capacitance of field effect transistor | Ciss | 1.7 nF |
Continuous voltage between gate and drain | UGD | <45 V |
Continuous voltage between gate and source | UGS | <20 V |
Continuous voltage between drain and source | UDSS | <45 V |
Continuous drain current | IDSS | <10 A |
Technology of field-effect transistor | Technology | MOSFET |
FET channel type | Channel | N-ch |