КП918Б
КП918, КП918А, КП918Б
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Description
Parameters
| Parameter | КП918А | КП918Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <45 W | |
Slope of a field effect transistor | S1-S2/I | 550 ~ 700при Iс = 2 А | 350 ~ 600при Iс = 2 А |
Initial drain current of the field effect transistor | I01-I02 | <60 mAпри U = 20 В | (not set) |
Gate leakage current with connected drain and source | IG | ||
Input capacitance of field effect transistor | Ciss | 100 pF | |
Continuous voltage between gate and drain | UGD | <55 V | |
Continuous voltage between gate and source | UGS | <20 V | |
Continuous voltage between drain and source | UDSS | <45 V | |
Continuous drain current | IDSS | <6 A | <4 A |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | (not set) | <3 Ω |