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3П915А-2

3П915, 3П915А-2, 3П915Б-2

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Description

Parameters

Parameter3П915А-23П915Б-2
Noise factor
NF
Power dissipation
P
<12 W
Slope of a field effect transistor
S1-S2/I
350 ~ 1200при Iс = 0.5 А >300при Iс = 0.5 А
Gate leakage current with connected drain and source
IG
1 µA
Continuous voltage between gate and source
UGS
<5 V
Continuous voltage between drain and source
UDSS
<7 V
Continuous drain current
IDSS
<650 mA
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch