2П914
2П914, 2П914А
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Description
Parameters
| Parameter | 2П914А | |
|---|---|---|
Noise factor | NF | 6 dBпри f = 0.2 ГГц |
Power dissipation | P | <500 mW |
Slope of a field effect transistor | S1-S2/I | 10 ~ 30при Uси = 10 В |
Initial drain current of the field effect transistor | I01-I02 | 100 mA ~ 250 mA |
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 8В |
Input capacitance of field effect transistor | Ciss | 10 pF |
Feedthrough capacitance | C12 | 2.5 pF |
Continuous voltage between gate and drain | UGD | <80 V |
Continuous voltage between gate and source | UGS | <30 V |
Continuous voltage between drain and source | UDSS | <50 V |
Continuous drain current | IDSS | <100 mA |
Power dissipation with heatsink | PHS | <2.5 W |
Technology of field-effect transistor | Technology | JFET |
FET channel type | Channel | N-ch |