КП913А

КП913, КП913А, КП913Б

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Description

Parameters

Parameter		КП913А	КП913Б
Noise factor	N_F
Power dissipation	P	<100 W
Slope of a field effect transistor	S1-S2/I	1000 ~ 3000при Iс = 3 А
Initial drain current of the field effect transistor	I₀₁-I₀₂	<200 mAпри U = 50 В
Gate leakage current with connected drain and source	I_G	1 µAпри Uсз = 25В
Input capacitance of field effect transistor	C_iss	390 pF
Feedthrough capacitance	C₁₂	15 pF
Continuous voltage between gate and drain	U_GD	<60 V
Continuous voltage between gate and source	U_GS	<25 V
Continuous voltage between drain and source	U_DSS	<50 V
Continuous drain current	I_DSS	<14 A	<10 A
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch