КП913

КП913, КП913А, КП913Б

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter		КП913А	КП913Б
Noise factor	N_F
Power dissipation	P	<100 W
Slope of a field effect transistor	S1-S2/I	1000 ~ 3000при Iс = 3 А
Initial drain current of the field effect transistor	I₀₁-I₀₂	<200 mAпри U = 50 В
Gate leakage current with connected drain and source	I_G	1 µAпри Uсз = 25В
Input capacitance of field effect transistor	C_iss	390 pF
Feedthrough capacitance	C₁₂	15 pF
Continuous voltage between gate and drain	U_GD	<60 V
Continuous voltage between gate and source	U_GS	<25 V
Continuous voltage between drain and source	U_DSS	<50 V
Continuous drain current	I_DSS	<14 A	<10 A
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch