КП912Б
КП912, КП912А, КП912Б
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | КП912А | КП912Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <40 W | |
Slope of a field effect transistor | S1-S2/I | 800 ~ 2200при Iс = 0.9 А | |
Gate leakage current with connected drain and source | IG | ||
Input capacitance of field effect transistor | Ciss | 500 pF | |
Feedthrough capacitance | C12 | 16 pF | |
Continuous voltage between gate and drain | UGD | <110 V | <70 V |
Continuous voltage between gate and source | UGS | <20 V | |
Continuous voltage between drain and source | UDSS | <100 V | <60 V |
Continuous drain current | IDSS | <8 A | <12 A |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <800 mΩ | <400 mΩ |