КП912
КП912, КП912А, КП912Б
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Description
Parameters
| Parameter | КП912А | КП912Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <40 W | |
Slope of a field effect transistor | S1-S2/I | 800 ~ 2200при Iс = 0.9 А | |
Gate leakage current with connected drain and source | IG | ||
Input capacitance of field effect transistor | Ciss | 500 pF | |
Feedthrough capacitance | C12 | 16 pF | |
Continuous voltage between gate and drain | UGD | <110 V | <70 V |
Continuous voltage between gate and source | UGS | <20 V | |
Continuous voltage between drain and source | UDSS | <100 V | <60 V |
Continuous drain current | IDSS | <8 A | <12 A |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <800 mΩ | <400 mΩ |