КП911Б

КП911, КП911А, КП911Б

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Description

Parameters

Parameter		КП911А	КП911Б
Noise factor	N_F
Power dissipation	P	<30 W
Slope of a field effect transistor	S1-S2/I	200 ~ 600при Iс = 0.5 А
Initial drain current of the field effect transistor	I₀₁-I₀₂	<50 mAпри U = 20 В	<30 mAпри U = 20 В
Gate leakage current with connected drain and source	I_G
Input capacitance of field effect transistor	C_iss	80 pF
Continuous voltage between gate and drain	U_GD	<60 V
Continuous voltage between gate and source	U_GS	<25 V
Continuous voltage between drain and source	U_DSS	<50 V
Continuous drain current	I_DSS	<3 A	<2.5 A
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch