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АП910

АП910, АП910А-2, АП910Б-2, 3П910А-2, 3П910Б-2

Documents

Description

Parameters

ParameterАП910А-2АП910Б-23П910А-23П910Б-2
IC package
Package
210А.22-3
Power dissipation
P
<1.5 W<3 W(not set)(not set)
Slope of a field effect transistor
S1-S2/I
>50при Uси = 3 В>100при Uси = 3 В>100>100
Gate leakage current with connected drain and source
IG
1 µA
Continuous voltage between gate and source
UGS
<3.5 V
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch