КП909Б
КП909, КП909А, КП909Б, КП909В
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Description
Parameters
| Parameter | КП909А | КП909Б | КП909В | |
|---|---|---|---|---|
Noise factor | NF | |||
Power dissipation | P | <50 W | ||
Slope of a field effect transistor | S1-S2/I | 350 ~ 900при Iс = 0.9 А | ||
Initial drain current of the field effect transistor | I01-I02 | 1 mA ~ 500 mAпри U = 20 В | ||
Gate leakage current with connected drain and source | IG | |||
Input capacitance of field effect transistor | Ciss | 125 pF | ||
Feedthrough capacitance | C12 | 6 pF | ||
Continuous voltage between gate and drain | UGD | <60 V | ||
Continuous voltage between gate and source | UGS | <25 V | ||
Continuous voltage between drain and source | UDSS | <50 V | ||
Continuous drain current | IDSS | <6.5 A | <4 A | <5 A |
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||