КП908Б
КП908, КП908А, КП908Б
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Description
Parameters
| Parameter | КП908А | КП908Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <3.5 W | |
Slope of a field effect transistor | S1-S2/I | 24 ~ 40при Iс = 0.08 А | |
Initial drain current of the field effect transistor | I01-I02 | 1 mA ~ 25 mAпри U = 20 В | |
Gate leakage current with connected drain and source | IG | ||
Input capacitance of field effect transistor | Ciss | 4.5 pF | 6.5 pF |
Feedthrough capacitance | C12 | 0.6 pF | |
Continuous voltage between gate and drain | UGD | <50 V | |
Continuous voltage between gate and source | UGS | <20 V | |
Continuous voltage between drain and source | UDSS | <40 V | |
Continuous drain current | IDSS | <300 mA | <200 mA |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |