КП907А
КП907, КП907А, КП907Б, КП907В
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Description
Parameters
| Parameter | КП907А | КП907Б | КП907В | |
|---|---|---|---|---|
Noise factor | NF | |||
Power dissipation | P | <11.5 W | <11.5 W | (not set) |
Slope of a field effect transistor | S1-S2/I | 10 ~ 200при Iс = 0.5 А | 110 ~ 200при Iс = 0.5 А | >80при Iс = 0.5 А |
Initial drain current of the field effect transistor | I01-I02 | <100 mAпри U = 20 В | ||
Gate leakage current with connected drain and source | IG | |||
Input capacitance of field effect transistor | Ciss | 20 pF | ||
Feedthrough capacitance | C12 | 3 pF | ||
Continuous voltage between gate and drain | UGD | <70 V | <70 V | (not set) |
Continuous voltage between gate and source | UGS | <30 V | <30 V | (not set) |
Continuous voltage between drain and source | UDSS | <60 V | <60 V | (not set) |
Continuous drain current | IDSS | <1.7 A | <1.3 A | <1 A |
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||