Доход от майнинга

КП905Б

КП905, КП905А, КП905Б

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterКП905АКП905Б
Noise factor
NF
6 dBпри f = 1 ГГц
Power dissipation
P
<4 W
Slope of a field effect transistor
S1-S2/I
18 ~ 39при Iс = 0.05 А
Initial drain current of the field effect transistor
I01-I02
<20 mAпри U = 20 В
Gate leakage current with connected drain and source
IG
Input capacitance of field effect transistor
Ciss
7 pF11 pF
Feedthrough capacitance
C12
0.6 pF
Continuous voltage between gate and drain
UGD
<70 V
Continuous voltage between gate and source
UGS
<30 V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<225 mA<150 mA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch