КП905А

КП905, КП905А, КП905Б

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Description

Parameters

Parameter		КП905А	КП905Б
Noise factor	N_F	6 dBпри f = 1 ГГц
Power dissipation	P	<4 W
Slope of a field effect transistor	S1-S2/I	18 ~ 39при Iс = 0.05 А
Initial drain current of the field effect transistor	I₀₁-I₀₂	<20 mAпри U = 20 В
Gate leakage current with connected drain and source	I_G
Input capacitance of field effect transistor	C_iss	7 pF	11 pF
Feedthrough capacitance	C₁₂	0.6 pF
Continuous voltage between gate and drain	U_GD	<70 V
Continuous voltage between gate and source	U_GS	<30 V
Continuous voltage between drain and source	U_DSS	<60 V
Continuous drain current	I_DSS	<225 mA	<150 mA
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch