КП905

КП905, КП905А, КП905Б

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter		КП905А	КП905Б
Noise factor	N_F	6 dBпри f = 1 ГГц
Power dissipation	P	<4 W
Slope of a field effect transistor	S1-S2/I	18 ~ 39при Iс = 0.05 А
Initial drain current of the field effect transistor	I₀₁-I₀₂	<20 mAпри U = 20 В
Gate leakage current with connected drain and source	I_G
Input capacitance of field effect transistor	C_iss	7 pF	11 pF
Feedthrough capacitance	C₁₂	0.6 pF
Continuous voltage between gate and drain	U_GD	<70 V
Continuous voltage between gate and source	U_GS	<30 V
Continuous voltage between drain and source	U_DSS	<60 V
Continuous drain current	I_DSS	<225 mA	<150 mA
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch