КП904Б
КП904, КП904А, КП904Б
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Description
Parameters
| Parameter | КП904А | КП904Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <50 W | |
Slope of a field effect transistor | S1-S2/I | 250 ~ 510при Iс = 1 А | |
Initial drain current of the field effect transistor | I01-I02 | <350 mAпри U = 20 В | |
Gate leakage current with connected drain and source | IG | ||
Input capacitance of field effect transistor | Ciss | 300 pF | |
Feedthrough capacitance | C12 | 7 pF | (not set) |
Continuous voltage between gate and drain | UGD | <100 V | |
Continuous voltage between gate and source | UGS | <30 V | |
Continuous voltage between drain and source | UDSS | <85 V | |
Continuous drain current | IDSS | <5 A | <3 A |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |