КП903
КП903, КП903А, КП903Б, КП903В
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Description
Parameters
| Parameter | КП903А | КП903Б | КП903В | |
|---|---|---|---|---|
Noise factor | NF | |||
Power dissipation | P | <65 W | ||
Slope of a field effect transistor | S1-S2/I | 85 ~ 150при Uси = 10 В | 50 ~ 130при Uси = 10 В | 60 ~ 140при Uси = 10 В |
Initial drain current of the field effect transistor | I01-I02 | 120 mA ~ 700 mA | 60 mA ~ 480 mA | 90 mA ~ 600 mA |
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 15В | ||
Input capacitance of field effect transistor | Ciss | 18 pF | ||
Feedthrough capacitance | C12 | 15 pF | ||
Continuous voltage between gate and drain | UGD | <20 V | ||
Continuous voltage between gate and source | UGS | <15 V | ||
Continuous voltage between drain and source | UDSS | <20 V | ||
Continuous drain current | IDSS | <700 mA | ||
Technology of field-effect transistor | Technology | JFET | ||
FET channel type | Channel | N-ch | ||