КП902А
КП902, КП902А, КП902Б, КП902В
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Description
Parameters
| Parameter | КП902А | КП902Б | КП902В | |
|---|---|---|---|---|
Noise factor | NF | 6 dBпри f = 0.25 ГГц | 8 dBпри f = 0.25 ГГц | |
Power dissipation | P | <3.5 W | ||
Slope of a field effect transistor | S1-S2/I | 10 ~ 25при Iс = 0.05 А | ||
Initial drain current of the field effect transistor | I01-I02 | <10 mA | ||
Gate leakage current with connected drain and source | IG | 3 nAпри Uсз = 30В | ||
Input capacitance of field effect transistor | Ciss | 11 pF | ||
Feedthrough capacitance | C12 | 0.6 pF | 0.6 pF | 0.8 pF |
Continuous voltage between gate and source | UGS | <30 V | ||
Continuous voltage between drain and source | UDSS | <50 V | ||
Continuous drain current | IDSS | <200 mA | ||
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||