КП902
КП902, КП902А, КП902Б, КП902В
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | КП902А | КП902Б | КП902В | |
|---|---|---|---|---|
Noise factor | NF | 6 dBпри f = 0.25 ГГц | 8 dBпри f = 0.25 ГГц | |
Power dissipation | P | <3.5 W | ||
Slope of a field effect transistor | S1-S2/I | 10 ~ 25при Iс = 0.05 А | ||
Initial drain current of the field effect transistor | I01-I02 | <10 mA | ||
Gate leakage current with connected drain and source | IG | 3 nAпри Uсз = 30В | ||
Input capacitance of field effect transistor | Ciss | 11 pF | ||
Feedthrough capacitance | C12 | 0.6 pF | 0.6 pF | 0.8 pF |
Continuous voltage between gate and source | UGS | <30 V | ||
Continuous voltage between drain and source | UDSS | <50 V | ||
Continuous drain current | IDSS | <200 mA | ||
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||