КП901Б

КП901, КП901А, КП901Б

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Description

Parameters

Parameter		КП901А	КП901Б
Noise factor	N_F
Power dissipation	P	<20 W
Slope of a field effect transistor	S1-S2/I	50 ~ 160при Iс = 0.5 А	60 ~ 170при Iс = 0.5 А
Initial drain current of the field effect transistor	I₀₁-I₀₂	15 mA ~ 200 mAпри U = 20 В
Gate leakage current with connected drain and source	I_G	100 nAпри Uсз = 15В
Input capacitance of field effect transistor	C_iss	100 pF
Feedthrough capacitance	C₁₂	10 pF
Continuous voltage between gate and drain	U_GD	<85 V
Continuous voltage between gate and source	U_GS	<30 V
Continuous voltage between drain and source	U_DSS	<70 V
Continuous drain current	I_DSS	<4 A
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch