КП901
КП901, КП901А, КП901Б
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Description
Parameters
| Parameter | КП901А | КП901Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <20 W | |
Slope of a field effect transistor | S1-S2/I | 50 ~ 160при Iс = 0.5 А | 60 ~ 170при Iс = 0.5 А |
Initial drain current of the field effect transistor | I01-I02 | 15 mA ~ 200 mAпри U = 20 В | |
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 15В | |
Input capacitance of field effect transistor | Ciss | 100 pF | |
Feedthrough capacitance | C12 | 10 pF | |
Continuous voltage between gate and drain | UGD | <85 V | |
Continuous voltage between gate and source | UGS | <30 V | |
Continuous voltage between drain and source | UDSS | <70 V | |
Continuous drain current | IDSS | <4 A | |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |