КП830
КП830
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Description
Parameters
| Parameter | КП830 | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <74 W |
Slope of a field effect transistor | S1-S2/I | >2500при Iс = 2.7 А |
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 20В |
Continuous voltage between gate and source | UGS | <20 V |
Continuous voltage between drain and source | UDSS | <500 V |
Continuous drain current | IDSS | <4.5 A |
Technology of field-effect transistor | Technology | MOSFET |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <1.5 Ω |
Pulse drain current | IDSS-I | <18 A |