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КП814

КП814, КП814А, КП814Б, КП814В, КП814Г, КП814Д, КП814Е, КП814Ж, КП814И, КП814К, КП814Л, КП814М, КП814Н, КП814П, КП814Р, КП814С, КП814Т, КП814У, КП814Ф

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Description

Parameters

ParameterКП814АКП814БКП814ВКП814ГКП814ДКП814ЕКП814ЖКП814ИКП814ККП814ЛКП814МКП814НКП814ПКП814РКП814СКП814ТКП814УКП814Ф
Noise factor
NF
Slope of a field effect transistor
S1-S2/I
1300 ~ 3000при Iс = 2.5 А
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<25 V
Continuous voltage between drain and source
UDSS
<300 V<300 V<400 V<400 V<500 V<500 V<600 V<600 V<700 V<700 V<800 V<800 V<900 V<900 V<950 V<950 V<1 kV<1 kV
Continuous drain current
IDSS
<10 A<12 A<8 A<10 A<7 A<10 A<6 A<8 A<5 A<6 A<3 A<4 A<3 A<3.8 A<3 A<3.6 A<3 A<3.6 A
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1 Ω<800 mΩ<1.5 Ω<1.2 Ω<2 Ω<1.3 Ω<2.3 Ω<1.8 Ω<3 Ω<2.5 Ω<4.2 Ω<3 Ω<4.5 Ω<4 Ω<4.5 Ω<4 Ω<4.7 Ω<4 Ω