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КП813А1

КП813, КП813А, КП813Б, КП813А1, КП813Б1

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Description

Parameters

ParameterКП813АКП813БКП813А1КП813Б1
Noise factor
NF
Power dissipation
P
<125 W
Slope of a field effect transistor
S1-S2/I
>5500при Iс = 10 А
Gate leakage current with connected drain and source
IG
100 nAпри Uсз = 20В
Input capacitance of field effect transistor
Ciss
2.7 nF
Feedthrough capacitance
C12
240 pF
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<22 A
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<120 mΩ<180 mΩ<120 mΩ<180 mΩ
Pulse drain current
IDSS-I
<88 A