КП812Б1
КП812, КП812А1, КП812Б1, КП812В1
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Description
Parameters
| Parameter | КП812А1 | КП812Б1 | КП812В1 | |
|---|---|---|---|---|
Noise factor | NF | |||
Power dissipation | P | <100 W | ||
Slope of a field effect transistor | S1-S2/I | >1500при Iс = 31 А | >1200при Iс = 24 А | >1200при Iс = 18 А |
Gate leakage current with connected drain and source | IG | 100 nAпри Uсз = 20В | ||
Input capacitance of field effect transistor | Ciss | 1.9 nF | ||
Feedthrough capacitance | C12 | 170 pF | ||
Continuous voltage between gate and source | UGS | <20 V | ||
Continuous voltage between drain and source | UDSS | <60 V | ||
Continuous drain current | IDSS | <50 A | <35 A | <35 A |
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <28 mΩ | <35 mΩ | <50 mΩ |
Pulse drain current | IDSS-I | <200 A | <190 A | <190 A |