КП810
КП810, КП810А, КП810Б, КП810В
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Description
Parameters
| Parameter | КП810А | КП810Б | КП810В | |
|---|---|---|---|---|
Noise factor | NF | |||
Power dissipation | P | <50 W | ||
Gate leakage current with connected drain and source | IG | 500 µA | ||
Continuous voltage between drain and source | UDSS | <1.3 kV | <1 kV | <1.1 kV |
Continuous drain current | IDSS | <7 A | <7 A | <5 A |
Technology of field-effect transistor | Technology | SIT | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <200 mΩ | ||