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КП809А

КП809, КП809А, КП809Б, КП809В, КП809Г, КП809Д, КП809Е, КП809А1, КП809Б1, КП809В1, КП809Г1, КП809Д1, КП809Е1

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Description

Parameters

ParameterКП809АКП809БКП809ВКП809ГКП809ДКП809ЕКП809А1КП809Б1КП809В1КП809Г1КП809Д1КП809Е1
Noise factor
NF
Power dissipation
P
<100 W<100 W<100 W<100 W<100 W<100 W<50 W<50 W<50 W<50 W<50 W<50 W
Slope of a field effect transistor
S1-S2/I
>1500при Iс = 3 А
Gate leakage current with connected drain and source
IG
100 µA
Input capacitance of field effect transistor
Ciss
3 nF
Feedthrough capacitance
C12
220 pF
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<400 V<500 V<600 V<700 V<800 V<750 V<400 V<500 V<600 V<700 V<800 V<750 V
Continuous drain current
IDSS
<25 A<20 A<15 A<15 A<10 A<8 A<25 A<20 A<15 A<15 A<10 A<8 A
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<300 mΩ<600 mΩ<1.2 Ω<1.5 Ω<1.8 Ω<2.5 Ω<300 mΩ<600 mΩ<1.2 Ω<1.5 Ω<1.8 Ω<2.5 Ω