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КП805Б

КП805, КП805А, КП805Б, КП805В

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Description

Parameters

ParameterКП805АКП805БКП805В
Noise factor
NF
Power dissipation
P
<60 W
Slope of a field effect transistor
S1-S2/I
>2500при Iс = 2 А
Gate leakage current with connected drain and source
IG
Input capacitance of field effect transistor
Ciss
1.3 nF
Continuous voltage between gate and drain
UGD
<600 V<500 V<600 V
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<600 V<500 V<600 V
Continuous drain current
IDSS
<4 A
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<2 Ω<2.5 Ω<2 Ω