КП804
КП804, КП804А
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Description
Parameters
| Parameter | КП804А | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <2 W |
Slope of a field effect transistor | S1-S2/I | 800 ~ 1300при Iс = 0.8 А |
Gate leakage current with connected drain and source | IG | |
Input capacitance of field effect transistor | Ciss | 200 pF |
Feedthrough capacitance | C12 | 25 pF |
Continuous voltage between gate and source | UGS | <20 V |
Continuous voltage between drain and source | UDSS | <60 V |
Continuous drain current | IDSS | <1 A |
Technology of field-effect transistor | Technology | MOSFET |
FET channel type | Channel | N-ch |
Pulse drain current | IDSS-I | <4 A |