КП803
КП803, КП803А, КП803Б
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Description
Parameters
| Parameter | КП803А | КП803Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <60 W | |
Slope of a field effect transistor | S1-S2/I | 750 ~ 1200при Uси = 30 В | |
Gate leakage current with connected drain and source | IG | ||
Input capacitance of field effect transistor | Ciss | 20 pF | |
Feedthrough capacitance | C12 | 20 pF | (not set) |
Continuous voltage between gate and drain | UGD | <1.01 kV | <810 V |
Continuous voltage between gate and source | UGS | <30 V | |
Continuous voltage between drain and source | UDSS | <1 kV | <800 V |
Technology of field-effect transistor | Technology | MOSFET | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <4.5 Ω | |