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КП802Б

КП802, КП802А, КП802Б

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Description

Parameters

ParameterКП802АКП802Б
Noise factor
NF
Power dissipation
P
<40 W
Slope of a field effect transistor
S1-S2/I
>2000при Iс = 3.5 А >800при Iс = 3.5 А
Gate leakage current with connected drain and source
IG
10 µA
Continuous voltage between gate and drain
UGD
<535 V<480 V
Continuous voltage between gate and source
UGS
<35 V<30 V
Continuous voltage between drain and source
UDSS
<500 V<450 V
Continuous drain current
IDSS
<2.5 A
Technology of field-effect transistor
Technology
JFET
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<3 Ω(not set)