КП801Б
КП801, КП801А, КП801Б, КП801В, КП801Г
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Description
Parameters
| Parameter | КП801А | КП801Б | КП801В | КП801Г | |
|---|---|---|---|---|---|
Noise factor | NF | ||||
Power dissipation | P | <60 W | <30 W | <100 W | <100 W |
Slope of a field effect transistor | S1-S2/I | >750при Iс = 4 А | >300при Iс = 1.5 А | 750 ~ 1700при Iс = 4 А | 600 ~ 1300 |
Gate leakage current with connected drain and source | IG | 300 µA | |||
Continuous voltage between gate and drain | UGD | <100 V | <130 V | <100 V | (not set) |
Continuous voltage between gate and source | UGS | <35 V | <35 V | <35 V | <40 V |
Continuous voltage between drain and source | UDSS | <65 V | <95 V | (not set) | <140 V |
Continuous drain current | IDSS | <5 A | <2.5 A | <8 A | <8 A |
Technology of field-effect transistor | Technology | JFET | |||
FET channel type | Channel | N-ch | |||
Channel resistance at ON state | RDS-ON | <2.2 Ω | <4.4 Ω | (not set) | (not set) |