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КП801

КП801, КП801А, КП801Б, КП801В, КП801Г

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Description

Parameters

ParameterКП801АКП801БКП801ВКП801Г
Noise factor
NF
Power dissipation
P
<60 W<30 W<100 W<100 W
Slope of a field effect transistor
S1-S2/I
>750при Iс = 4 А >300при Iс = 1.5 А 750 ~ 1700при Iс = 4 А 600 ~ 1300
Gate leakage current with connected drain and source
IG
300 µA
Continuous voltage between gate and drain
UGD
<100 V<130 V<100 V(not set)
Continuous voltage between gate and source
UGS
<35 V<35 V<35 V<40 V
Continuous voltage between drain and source
UDSS
<65 V<95 V(not set)<140 V
Continuous drain current
IDSS
<5 A<2.5 A<8 A<8 A
Technology of field-effect transistor
Technology
JFET
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<2.2 Ω<4.4 Ω(not set)(not set)