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КП771

КП771, КП771А

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Description

Parameters

ParameterКП771А
Noise factor
NF
Power dissipation
P
<150 W
Gate leakage current with connected drain and source
IG
Continuous voltage between gate and source
UGS
<20 V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<40 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<40 mΩ